?2004 fairchild semiconductor corporation rev. b, may 2004 2n5401 pnp epitaxial silicon transistor absolute maximum ratings t a =25 c unless otherwise noted electrical characteristics t a =25 c unless otherwise noted * pulse test: pulse width 300 s, duty cycle 2% symbol parameter value units v cbo collector-base voltage -160 v v ceo collector-emitter voltage -150 v v ebo emitter-base voltage -5 v i c collector current -600 ma p c collector dissipation 625 mw t j junction temperature 150 c t stg storage temperature -55 ~ 150 c symbol parameter test condition min. typ. max. units bv cbo collector-base breakdown voltage i c = -100 a, i e =0 -160 v bv ceo * collector-emitter breakdown voltage i c = -1ma, i b =0 -150 v bv ebo emitter-base breakdown voltage i e = -10 a, i c =0 -5 v i cbo collector cut-off current v cb = -120v, i e =0 -50 na i ebo emitter cut-off current v eb = -3v, i c =0 -50 na h fe * dc current gain i c = -1ma, v ce = -5v i c = -10ma, v ce = -5v i c = -50ma, v ce = -5v 30 60 50 240 v ce (sat) * collector-emitter saturation voltage i c = -10ma, i b = -1ma i c = -50ma, i b = -5ma -0.2 -0.5 v v v be (sat) * base-emitter saturation voltage i c = -10ma, i b = -1ma i c = -50ma, i b = -5ma -1 -1 v v f t current gain bandwidth product i c = -10ma, v ce = -10v, f=100mhz 100 400 mhz c ob output capacitance v cb = -10v, i e =0, f=1mhz 6 pf n f noise figure i c = -250 a, v ce = -5v r s =1k ? f=10hz to 15.7khz 8db 2n5401 amplifier transistor ? collector-emitter voltage: v ceo = 150v ? collector dissipation: p c (max)=625mw ? suffix ?-c? means conter collector (1. emitter 2. collector 3. base) 1. emitter 2. base 3. collector to-92 1
?2004 fairchild semiconductor corporation 2n5401 rev. b, may 2004 typical characteristics figure 1. dc current gain figure 2. base-emitter saturation voltage collector-emitter saturation voltage figure 3. base-emitter on voltage figure 4. output capacitance figure 5. current gain bandwidth product -1 -10 -100 -1000 10 100 1000 v ce = -5v h fe , dc current gain i c [ma], collector current -1 -10 -100 -1000 -0.01 -0.1 -1 -10 i c = 10 i b v ce (sat) v be (sat) v be (sat), v ce (sat)[v], saturation voltage i c [ma], collector current -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1 -10 -100 -1000 v ce = -5v i c [ma], collector current v be [v], base-emitter voltage -1 -10 -100 0.1 1 10 100 i e = 0 f = 1mhz c ob [pf], capacitance v cb [v], collector-base voltage -1 -10 -100 -1000 1 10 100 1000 v ce = -10v f t [mhz], current gain-bandwidth product i c [ma], collector current
0.46 0.10 1.27typ (r2.29) 3.86max [1.27 0.20 ] 1.27typ [1.27 0.20 ] 3.60 0.20 14.47 0.40 1.02 0.10 (0.25) 4.58 0.20 4.58 +0.25 ?.15 0.38 +0.10 ?.05 0.38 +0.10 ?.05 to-92 package dimensions 2n5401 dimensions in millimeters rev. b, may 2004 ?2004 fairchild semiconductor corporation
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